MRF6S18100NR1 MRF6S18100NBR1
11
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
—
1805--1880 MHz
G
ps
, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
f, FREQUENCY (MHz)
12
1800
20
Gps
VDD
=28Vdc
IDQ
= 900 mA
17 60
50
40
30
1880
IRL
Figure 18. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ Pout
= 100 Watts
-- 3 0
0
-- 1 0
-- 2 0
-- 4 0
η
D
, DRAIN EFFICIENCY (%)
16
15
14
ηD
1810 1820 1830 1840 1850
13
1860 1870
1800 18801810 1820 1830 1840 1850 1860 1870
G
ps
, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
f, FREQUENCY (MHz)
13
20
Gps
VDD
=28Vdc
IDQ
= 900 mA
16 50IRL
40
30
Figure 19. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ Pout
= 40 Watts
-- 3 0
-- 1 0
-- 2 0
-- 4 0
η
D
, DRAIN EFFICIENCY (%)
15
14
ηD
Figure 20. EVM versus Frequency
f, FREQUENCY (MHz)
Pout=60WAvg.
42 W Avg.
25 W Avg.
VDD
=28Vdc
IDQ
= 700 mA
EVM, ERROR VECTOR MAGNITUDE (% rms)
1900
1
6
3
1880
1860
1840
1800
4
2
5
1820
Figure 21. EVM and Drain Efficiency versus
Output Power
Pout, OUTPUT POWER (WATTS) AVG.
100
4
10
VDD
=28Vdc
IDQ
= 700 mA
f = 1840 MHz
EDGE Modulation
8
6
0
10
1
2
20
50
40
30
0
10
η
D
, DRAIN EFFICIENCY (%)
EVM, ERROR VECTOR MAGNITUDE (% rms)
TC
=25_C
ηD
EVM
10
LIFETIME BU
Y
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
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